ssm3k17fu 2007-11-01 1 toshiba field effect transistor silicon n channel mos type ssm3k17fu high speed switching applications analog switch applications ? suitable for high-density mounting due to compact package ? high drain-source voltage ? high speed switching absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds 50 v gate-source voltage v gss 7 v dc i d 100 drain current pulse i dp 200 ma drain power dissipation (ta = 25c) p d (note 1) 150 mw channel temperature t ch 150 c storage temperature range t stg ? 55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 0.6 mm 2 3) marking equivalent circuit this transistor is a electrostatic sensit ive device. please handle with caution. unit: mm jedec D jeita sc-70 toshiba 2-2e1e weight: 6 mg (typ.) 0.6 mm 1.0 mm d m 1 2 3 12 3
ssm3k17fu 2007-11-01 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 7 v, v ds = 0 D D 5 a drain-source breakdown voltage v (br) dss i d = 0.1 ma, v gs = 0 50 D D v drain cut-off current i dss v ds = 50 v, v gs = 0 D D 1 a gate threshold voltage v th v ds = 3 v, i d = 1 a 0.9 D 1.5 v forward transfer admittance ? y fs ? v ds = 3 v, i d = 10 ma 20 40 D ms i d = 10 ma, v gs = 4 v D 12 20 drain-source on resistance r ds (on) i d = 10 ma, v gs = 2.5 v D 22 40 ? input capacitance c iss v ds = 3 v, v gs = 0, f = 1 mhz D 7 D pf reverse transfer capacitance c rss v ds = 3 v, v gs = 0, f = 1 mhz D 3 D pf output capacitance c oss v ds = 3 v, v gs = 0, f = 1 mhz D 7 D pf turn-on time t on D 100 D switching time turn-off time t off v dd = 3 v, i d = 20 ma, v gs = 0~3 v, r g = 10 ? , r l = 150 ? D 40 D ns switching time test circuit (a) test circuit (b) v in (c) v out t on 90% 10% 0 v 3 v 10% 90% t off t r t f v dd v ds ( on ) v dd = 3 v duty < = 1% v in : t r , t f < 5 ns (z out = 50 ? ) common source ta = 25c v dd out in 3 v 0 1 s 50 ? r l 10 ?
ssm3k17fu 2007-11-01 3 i d ? v ds i d ? v gs r ds (on) ? i d r ds (on) ? ta r ds (on) ? v gs ? y fs ? ? i d drain-source voltage v ds (v) gate-source voltage v gs (v) drain current i d (ma) ambient temperature ta (c) gate-source voltage v gs (v) drain current i d (ma) drain current i d (ma) drain current i d (ma) drain-source on resistance r ds (on) ( ? ) drain-source on resistance r ds (on) ( ? ) forward transfer admittance ? y fs ? (ms) drain-source on resistance r ds (on) ( ? ) 0 0 40 100 0.4 20 60 80 v gs = 2.5 v common source ta = 25c 4 0.8 1.2 1.6 2 4.5 5 023 1 0.001 0.1 1000 0.01 10 100 ta = 150c common source v ds = 3 v ? 25c 1 4 5 6 7 75c 25c 1 0.5 1 3 10 5 30 50 100 3 5 10 30 50 100 common source ta = 25c v gs = 2.5 v 4 v 30 20 0 ? 50 0 50 100 150 10 40 common source i d = 10 ma v gs = 2.5 v 4 v 0 0 2 4 6 8 10 10 20 30 40 i d = 10 ma common source ta = 25c 100 ma 1 10 100 3 10 30 50 100 300 500 common source v ds = 3 v ta = 25c 5 30 50
ssm3k17fu 2007-11-01 4 ambient temperature ta (c) v th ? ta c ? v ds t ? i d i dr ? v ds p d ? ta ambient temperature ta (c) drain-source voltage v ds (v) drain current i d (ma) drain-source voltage v ds (v) capacitance c (pf) gate threshold voltage v th (v) drain reverse current i dr (ma) switching time t (ns) drain power dissipation p d (mw) 0 0 100 250 160 40 50 150 200 80 120 mounted on fr4 board. (25.4 mm 25.4 mm 1.6 t, cu pad: 0.6 mm 2 3) 0 0.4 0.8 1.2 1.6 2 ? 50 0 50 100 150 common source v ds = 3 v i d = 1 a 1 10 100 3 1 3 5 10 30 50 5 30 50 common source v gs = 0 v f = 1 mhz ta = 25c c iss c oss c rss 3 1 10 100 1000 100 1000 10 50 500 50 500 5 t r t on t f t off common source v dd = 3 v v gs = 0~3 v r g = 10 ? ta = 25c 3 30 300 300 30 5 0 0 ? 100 ? 250 ? 0.4 ? 50 ? 150 ? 200 ? 0.8 ? 1.2 ? 1.6 ? 2 common source v gs = 0 v ta = 25c g d s
ssm3k17fu 2007-11-01 5 restrictions on product use 20070701-en general ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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